powerdi is a registered tr ademark of diodes incorporated. dm t4004l ps document number: ds 37587 rev. 3 - 2 1 of 6 www.diodes.com may 2016 ? diodes incorporated dm t4004l ps 40v n - channel enhancement mode mosfet powerdi product summary bv dss r ds(on) m ax i d t c = + 25c 40 v 2. 5 m? @ v gs = 10 v 90a 4 m? @ v gs = 4.5 v 90a description and applications this mosfet is designed to minimize the on - state resistance (r ds( on ) ) , yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? engine management systems ? body control electronics ? dc - dc converters features ? 1 00% unclamped inductive switching C ensures more reli able and robust end application ? low r ds ( on ) C minimizes power losses ? low qg C minimizes switching losses ? lead - free finish; rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? case: powerdi5060 - 8 ? case material: molded plastic, Dgreen molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal finish - matte tin a nnealed over copper leadframe. solderable per mil - std - 202, method 2 08 ? weight: 0.097 grams ( a pproximate) ordering information (note 4 ) part number case packaging dm t 400 4 l ps - 13 powerdi5060 - 8 2 , 500 / tape & reel note s: 1 . eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. all applicable rohs exemptions applied. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm tota l br + cl) and <1000ppm antimony compounds. 4. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information bottom view t op view pin configuration top view internal schematic powerdi5060 - 8 pin1 s d d g d d s s s d s s g d d d t4004ls yy ww = manufacturers marking green
powerdi is a registered tr ademark of diodes incorporated. dm t4004l ps document number: ds 37587 rev. 3 - 2 2 of 6 www.diodes.com may 2016 ? diodes incorporated dm t4004l ps maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 4 0 v gate - source voltage v gss 20 v continuous drain current (note 5 ) t a = + 25 c t a = +70 c i d 26 21 a continuous drain current (note 6 ) t c = + 25 c i d 9 0 a t c = + 7 0 c (note 8) 9 0 maximum continuous body diode f orward current (note 6 ) i s 70 a pulsed drain current ( 10 ? dm 100 a avalanche current , l=0. 2 mh i a s 33.3 a avalanche energy , l=0. 2 mh e a s 1 10 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 5 ) t a = + 25 ? d 2 .6 w thermal resistance, junction to ambient (note 5 ) r ja 47 c/w total power dissipation (note 6 ) t c = + 25 ? d 1 38 w thermal resistance, junction to case (note 6 ) r j c 0.9 c/w operating and storage temperature range t j, t stg - 55 to +1 50 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 4 0 gs = 0v, i d = 1m a zero gate voltage drain current i dss ds = 32 v, v gs = 0v gate - source leakage i gss gs = 20 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs (th) 1 ds = v gs , i d = 250 a ds (on) ? gs = 10 v, i d = 50 a gs = 4.5 v, i d = 50 a diode forward voltage v sd gs = 0v, i s = 50 a dynamic characteristics (note 8 ) input capacitance c iss ds = 20 v, v gs = 0v , f = 1 mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1 mhz total gate charge ( v gs = 4.5 v ) q g d d = 20 v, i d = 30 a total gate charge ( v gs = 10v ) q g gs gd d( on ) dd = 20 v, v gs = 10 v, i d = 30 a , r g = 1.6 r d( off ) f rr ? ? f = 50 a, di/dt = 1 0 0a/s rr ? ? notes: 5 . device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single - sided 1.6mm fr - 4 pcb; device is measured under still air conditions whilst operating in a steady state. 6. thermal resistance from junction to soldering point (on the exposed drain pad). 7 . short duration pulse test used to minimize self - heating effect. 8 . guaranteed by design. not subject to production testing.
powerdi is a registered tr ademark of diodes incorporated. dm t4004l ps document number: ds 37587 rev. 3 - 2 3 of 6 www.diodes.com may 2016 ? diodes incorporated dm t4004l ps 0.0 30.0 60.0 90.0 120.0 150.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) figure 1. typical output characteristic v gs =2.3v v gs =2.5v v gs =3.0v v gs =3.5v v gs = 10.0v v gs =4.0v v gs =4.5v v gs = 5.0v 0 5 10 15 20 25 30 0 1 2 3 4 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 5.0v - 55 25 85 125 150 0 3 6 9 12 15 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain - source on - resistance (m ? ) v gs , gate - source voltage (v) figure 4. typical transfer characteristic i d =50a 2.00 2.20 2.40 2.60 2.80 3.00 3.20 3.40 10 30 50 70 90 110 130 150 r ds(on) , drain - source on - resistance (m ? d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs =10.0v v gs =4.5v 0 0.001 0.002 0.003 0.004 0.005 10 30 50 70 90 110 130 150 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 5. typical on - resistance vs. drain current and temperature v gs =10v - 55 25 85 125 150 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( ( ) figure 6. on - resistance variation with temperature v gs =4.5v, i d =50a v gs =10v, i d =50a
powerdi is a registered tr ademark of diodes incorporated. dm t4004l ps document number: ds 37587 rev. 3 - 2 4 of 6 www.diodes.com may 2016 ? diodes incorporated dm t4004l ps 0 0.001 0.002 0.003 0.004 0.005 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( ? ) t j , junction temperature ( ) figure 7. on - resistance variation with temperature v gs =10v, i d =50a v gs =4.5v, i d =50a 0 0.5 1 1.5 2 - 50 - 25 0 25 50 75 100 125 150 v gs(th), gate threshold voltage (v) t j , junction temperature ( d =250 a i d =1ma 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c j , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f=1mhz c iss c oss c rss 0 30 60 90 120 150 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current v gs =0v, t a = - 55 v gs =0v, t a =25 v gs =0v, t a =85 v gs =0v, t a =150 v gs =0v, t a =125 0.1 1 10 100 1000 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 12. soa, safe operation area t j(max) =150 t c =25 single pulse dut on infinite heatsink v gs =10v r ds(on) limited p w =1s p w =100ms p w =10ms p w =1ms p w =100 s p w =10 s p w = 1 s 0 2 4 6 8 10 0 10 20 30 40 50 60 70 80 v gs , gate - source voltage (v) qg, total gate charge (nc) figure 11. gate charge v ds =20v, i d =30a
powerdi is a registered tr ademark of diodes incorporated. dm t4004l ps document number: ds 37587 rev. 3 - 2 5 of 6 www.diodes.com may 2016 ? diodes incorporated dm t4004l ps package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. powerdi5060 - 8 dim min max typ a 0.90 1.10 1.00 a1 0.00 0.05 - b 0.33 0.51 0.41 b2 0.200 0.350 0.273 b3 0.40 0.80 0.60 c 0.230 0.330 0.277 d 5.15 bsc d1 4.70 5.10 4.90 d2 3.70 4.10 3.90 d3 3.90 4.30 4.10 e 6.15 bsc e1 5.60 6.00 5.80 e2 3.28 3.68 3.48 e3 3.99 4.39 4.19 e 1.27 bsc g 0.51 0.71 0.61 k 0.51 - - l 0.51 0.71 0.61 l1 0.100 0.200 0.175 m 3.235 4.035 3.635 m1 1.00 1.40 1.21 10o 12o 11o 1 6o 8o 7o all dimensions in mm 0.001 0.01 0.1 1 1e - 06 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance r jc (t)=r(t) * r jc r jc =0.9 d1 e1 a l k m l1 d2 g e2 detail a 0(4x) a1 c e d e 1 detail a b (8x) e/2 1 01 (4x) m1 b2 (4x) b3 (4x) e3 d3
powerdi is a registered tr ademark of diodes incorporated. dm t4004l ps document number: ds 37587 rev. 3 - 2 6 of 6 www.diodes.com may 2016 ? diodes incorporated dm t4004l ps suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are sp ecifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or sys tems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiven ess. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related re quirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com dimensions value (in mm) c 1.270 g 0.660 g1 0.820 x 0.610 x1 4.100 x2 0.755 x 3 4.420 x 4 5.610 y 1.270 y1 0.600 y2 1. 020 y3 0.295 y 4 1. 825 y5 3.810 y6 0.180 y7 6.610 y7 x3 y2 y5 x1 g1 x c y(4x) g x2 y3 y4 y6 x4 y1
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